In 2019, only 1 cell phone manufacturer launched 1 GaN fast charger, this year can be called the first year of GaN fast charger, a new charging category has just been born. And this category is so novel that he appeared without any previous reference object, but gained unprecedented attention.

In 2020, 10 cell phone manufacturers have already launched 18 models of GaN fast chargers. oppo, realme, xiaomi, nubia, samsung, lenovo, nut, zte all entered the GaN fast charger market and launched a wide variety of products, and the market became lively for a time.

If we follow the growth rate of the market, GaN fast charger has exceeded 100% compound growth, or even higher. The pairing of GaN and fast charger can be described as a combination of left lyn and right li. Upstream research and development has made a breakthrough, cell phone manufacturers are optimistic about fast charging applications, and consumers are willing to pay for the products.

Gallium nitride (GaN) is a next-generation semiconductor material that operates up to twenty times faster than older conventional silicon (Si) technology and is capable of achieving three times more power for use in cutting-edge fast charger products, achieving far better performance than existing products, with three times more output power for the same size.

GaN materials have the advantages of high operating frequency, high operating temperature and high power density, and can deliver more than double the power using GaN switches with the same volume of the adapter. According to the market analysis of CITIC Securities, the global GaN charger market is expected to be 2.3 billion yuan in 2020 and will rise rapidly to 63.8 billion yuan in 2025, with a 5-year compound growth rate of 94%, with an exceptionally promising market outlook.

From CASA third-generation semiconductor industry technology innovation strategic alliance released "2016-2023 China SiC, GaN power electronic device application market size estimates (billion yuan)" market report shows that in 2020 the third-generation semiconductor in the consumer power supply market size of up to 2 billion yuan, such as coupled with industrial and commercial power supply, uninterruptible power supply, photovoltaic inverter three segments, the market volume will exceed 5 billion yuan. By 2022 and 2023, it will continue to increase year by year.

Combined with this data, the growth rate of GaN in the fast charging market has been obvious to industry practitioners and end consumers, and the growth trend will be compounded in 2019, 2020, and even 2021 and 2022.

Research firm BCC Research has also measured the fast charger market, with the global fast charger market size of $1.727 billion in 2017 and will reach $2.743 billion in 2022, with a profit margin of nearly $10 billion. This data includes the third-generation semiconductor applied to the charging device after the sale price of the whole machine, so it seems that the charger small products is also a large market of ten billion dollars.

Recently, Ali Research Institute released the "Top 10 Technology Trends of Dharma Institute 2021", in which the first one is the third-generation semiconductors represented by gallium nitride and silicon carbide ushering in the application explosion.

The report mentions that the third-generation semiconductors represented by gallium nitride (GaN) and silicon carbide (SiC) have excellent characteristics such as high temperature resistance, high voltage resistance, high frequency, high power and radiation resistance, but they are limited to small-scale applications for many years due to process and cost constraints.

In recent years, with the material growth, device preparation and other technological breakthroughs, the third-generation semiconductor cost advantage gradually emerged, and is opening up the application market: SiC components have been used as automotive inverters, GaN fast chargers are also listed in large numbers. In the next five years, electronic devices based on third-generation semiconductor materials will be widely used in 5G base stations, new energy vehicles, extra-high voltage, data centers and other scenarios.

As for the GaN FET vs MOS FET chip price that the industry is concerned about, from this development roadmap, we can see that as the technology and market application gradually mature, the cost will not be a problem after mass production, and there will be a major breakthrough every year. In 2022, GaN chips will be on par with traditional power devices, and in 2023, the cost will even be more advantageous.